| 摘要 |
PURPOSE:To obtain a semiconductor laser device in which a window of desirable quality can be provided stably while keeping the properties of conventional semiconductor lasers having no window as they are, by crystal-growing a high resistance thin film of a specific material so that a window layer absorbing little light is provided on the end faces of a resonator. CONSTITUTION:A basic structure 1-6 required for laser oscillation is formed by crystal growth and the end faces of a resonator are formed by cleavage. A high resistance thin film of a material having an energy gap larger than the energy gap between radiation transition levels of a material of the active layer 4 in the laser basic structure 1-6 is crystal grown on the end faces of the resonator by the molecular beam epitaxy or vapor growth, so that a window layer 10 hardly absorbing light is provided. According to an embodiment, the window layer 10 is provided by crystal growth of Al2Ga1-zAs having an energy gap larger than AlxGa1-xAs constituting the active layer 4, on the end faces of the resonator of the basic laser structure as shown in the drawing. |
