| 摘要 |
PURPOSE:To eliminate the need for a photolithographic process for obtaining the ohmic connection of a channel forming region and a source electrode, and to reduce manufacturing cost by a method wherein the specified region of a channel forming section is masked, an impurity is diffused selectively and a source region is formed and a reverse conductivity type impurity is diffused in high surface concentration. CONSTITUTION:An oxide film 3 and an electrode layer 4 are laminated onto one conductivity type Si substrate and a gate is juxtaposed, and a reverse conductivity type impurity is introduced into the substrate 1, using the gate as a mask to shape a channel forming region 5. The specified region of the channel forming region 5 is masked, and one conductivity type impurity is diffused selectively to form a source region 6 shallower than the channel forming region 5, and an inter-layer insulating film 7 is shaped. A contact window for connecting the channel forming region 5 and the source region 6 is formed, and the reverse conductivity type impurity is diffused in surface concentration higher than that of the channel forming region 5 and lower than that of the source region 6, thus forming a region 2 brought into ohmic-contact with the source region 6 and the channel forming region 5. |
