| 摘要 |
PURPOSE:To obtain a semiconductor thin film forming apparatus which enables a uniform semiconductor thin film to be formed on a substrate at a high film forming rate, by a structure wherein a high frequency applying electrode is formed in an irregular configuration in a film forming apparatus which forms a thin film utilizing glow discharge decomposition, and the recess sections are made different in width from each other. CONSTITUTION:In a film forming apparatus which forms a thin film utilizing glow discharge decomposition, a high frequency applying electrode 1 is formed in an irregular configuration, while the recess sections 7 are made different from in width each other. For example, in the high frequency applying electrode 1 formed in such an irregular configuration, the width of the recess section 7 is 10mm at the end section while being 20mm at the center section, so that the film forming rate distribution is uniform. A holder 5 for a substrate constituted by SUS304 is installed in a substrate insertion chamber, and a substrate is then heated up to a predetermined temperature by heating means while the chamber is evacuated at pressure below 0.01Torr. Next, after the predetermined pressure and substrate temperature are obtained, the holder 5 for a substrate with a size of 300X230mm which holds a glass substrate with a size of 250X100mm is sent into a reaction chamber in which disilane is being discharged by carrying means. During the holder 5 for a substrate is made to pass through the reaction chamber, an amorphous silicon thin film is formed on the substrate. |
