| 摘要 |
PURPOSE:To eliminate the process of through hole etching and thus obtain multi- layer wiring connections of high reliability without disconnections by a method wherein the first metallic wiring film is left only at a through hole part in a projection form, and the second metallic wiring film is formed, after the projection part is exposed by using the coating characteristic of an organic film. CONSTITUTION:The remove the resist of unnecessary part by leaving only the parts of through hole and contact, a mask layer 14 constituted of resist is formed, then the first metallic wiring layer 13 is mesa-etched to a fixed thickness resulting in the formation of a projection formed mesa region 19 into the pattern of the first metallic wiring layer 13, and the contact part turns thick, accordingly the first metallic wiring layer 13 remains. When the second insulation film 15 is grown by a CVD method, etc., and successively the organic film 16 of polyimide, etc. is coated, it turns thin on the projection part and thick on others. When etching is performed at a speed whereby the organic film 16 and the insulation film 15 are likewise etched, only the surface of the mesa region 19 of the metallic wiring film is first exposed. The second metallic wiring pattern 17 is formed by predetermined procedures. |
