| 摘要 |
<p>A method of fabricating a superconducting tunnel junction in which a single resist mark simultaneously defines the area of the counterelectrode and the junction itself, which is achieved by locating the junction at least one edge of a base electrode which has previously been insulated. Further patterning of the completed device is envisaged so as to reduce the area of the junction. The superconducting layers may be formed from niobium or niobium nitrate and the barrier layer from aluminium or tantalum. The etching may be performed by means of a chloride plasma capable of etching both the superconductor material and the barrier material.</p> |
