| 摘要 |
PURPOSE:To shorten the manufacturing time as well as to reduce the cost of manufacture of the titled detector by a method wherein a metal plating is performed after a groove cutting work has been performed on a semiconductor substrate, and then a plurality of unit detecting regions are formed by fusing and filling a metal, having a high shielding power for radiation rays, into the groove. CONSTITUTION:The groove cutting work is performed on an n-Si semiconductor substrate 9, an electroless plating is performed on the entire semiconductor substrate, and an Ni film 10 is adhered. Then, unnecessary Pb-Sn and an Ni film are removed and shaped up by performing grinding and chemical etching after a Pb- Sn alloy 11 has been fused and filled in the groove, and an Al vapor- deposited film 12 as an ohmic electrode and an Au vapor-deposited film 13 as an isolation signal electrode are formed. |
