| 摘要 |
<p>An ingot of single crystal of a compound semiconductor made according to LEC process or HB process or a block or wafer formed by cutting or slicing the ingot is annealed at elevated temperatures higher than 1100°C and lower than the melting point of the crystal, and the temperature of the ingot etc. is lowered at a rate of 15 to 30°C/min to reduce the oval pit density formed by an AB etchant to 5 x 10-4 cm-2 or below, preferably 5 x 10-3 cm-2 or below. The single crystal thus treated serves to improve the uniformity of the properties of devices manufactured by using it as a substrate.</p> |
