发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To prevent adhesion and remaining of chipped powder and cracked edges in a metallized region by dicing and dividing a region not metallized in the rear of a wafer. CONSTITUTION:The whole rear of a wafer 1 is not metallized 2, metallized regions in IC regions on the rear are formed in small size along regions for dicing and division among each IC on the surface of the wafer 1, and regions 9 not metallized 2 are diced and divided. Accordingly, chipped powder, cracked edges 8, etc., are separated easily from the wafer 1, and are not mixed onto the interface of die bonding, thus resulting in the equalization of interface thickness, the uniformization of the wetting spread of solder, etc., and their void-less state, then largely improving and equalizing the thermal conductivity of basic properties required for die bonding.</p>
申请公布号 JPH01225131(A) 申请公布日期 1989.09.08
申请号 JP19880049540 申请日期 1988.03.04
申请人 HITACHI LTD 发明人 SAWAHATA MAMORU;KODAMA HIRONORI;SOGA TASAO;YAMADA KAZUJI;HOSOKAWA TAKASHI;AIDA MASAHIRO;SAWARA KUNIZO
分类号 H01L21/52;H01L21/301;H01L21/78 主分类号 H01L21/52
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