| 摘要 |
<p>A fabrication method for the semiconductor device of the present invention is characterized by including the step in which patterning of an amorphous silicon type semiconductor layer and/or a back electrode brings a wire mask into substantially close contact with a film formation surface to form an amorphous silicon type semiconductor layer and/or the back electrode and the step in which the thin film extending to a wire portion is removed, whenever necessary. A film formation apparatus of the present invention comprises a main body for housing the substrate, a means for fixing the substrate to the main body and locating the substrate and a plurality of thin wires disposed on the film formation surface side of the substrate and to be brought into substantially close contact with the film formation surface of the substrate. In accordance with the fabrication method for the semiconductor device and the film formation apparatus for said method of the present invention, complete patterning can be made even when an extremely thin film is formed around the wire portion and the production yield can be improved. It is not necessary to make strict adjustment of the wires and complicated steps in ordinary etching processes such as application of a resist, curing of the resist, removal of the resist, and the like, become unnecessary.</p> |
