| 摘要 |
PURPOSE:To prevent a soft error from occurring in a dynamic RAM by forming a protrusionlike insulating film on the periphery of a capacitor oxide film. CONSTITUTION:A protrusionlike insulating film 22 is formed on the periphery of a capacitor oxide film 13. Since a p<+> type substrate 11 is electrically insulated from n<+> type diffused regions 16, 17, carrier is generated in the substrate 11 even by irradiation with alpha-rays, and even if it flows to an inversion layer 21 by diffusion, the carrier does not flow the layer 21 to the regions 16, 17, and a current does not flow by the irradiation with alpha-rays so that no information is erased. Thus, it can prevent a soft error from generating in a dynamic RAM. |
