INTEGRATED CIRCUIT DEVICE

摘要

A buried contact structure to decrease the spreading resistance of various circuit elements of semiconductor devices such as transistors and for reducing the resistance of polysilicon wires typically used in short lengths to connect the circuit elements to other metallic wires. The buried contact structure more specifically includes a contact diffusion (2) superimposed on the field implant which includes the source (3) and/or drain (5) of the transistor device. An overlayed layer (1) of polysilicon is then disposed to make contact with the buried contact diffusion (2). The buried contact structure has a lower resistance than the field implant and therefore provides a lower resistance path for the device current.