| 摘要 |
PURPOSE:To remove the adverse influence of the surface depletion layer as well as to reduce the parasitic resistance of the titled transistor by a method wherein a semiconductor layer having higher specific resistance than that of active layer is provided on the active layer formed on a semiconductor substrate. CONSTITUTION:An N type active layer 14 is provided between a high resistance layers 12 and 19 in such a manner that the active layer which will be used as a current path is buried in the semiconductor layer. As there exists no region exposed on the surface and the layers 12 and 19 are lattice-matched with the active layer 14, the effect of an interfacial level is small. Consequently, there is no effect of a surface depletion layer, and the increase in parasitic resistance of a source resistor and a drain resistor is eliminated, thereby enabling to improve the high frequency noise characteristics of FET, switching characteristics and gain characteristics of the titled transistor. |
