| 摘要 |
The present invention relates to a non-volatile electrically alterable read only storage memory array with fast reading and writing capability and a minimized cell size. Each cell of the array is composed of a floating gate FET (QFG) and a standard FET (Ox) connected in series between a reading bit line ((B/L-R)j) and a programming bit line ((B/L-P)j) for the row in which the cell is located. The floating gate (24) of the first FET is connected through a capacitor to the common connection point between the first and second FET. Dual electron injection stack material is used for the dielectric of a capacitor lying above the floating gate of the first FET. In programming the cell, a positive charge is stored on the floating gate of the first FET. When the cell is erased, the charge on the floating gate is reduced to zero, or at most a small negative charge. Because no large negative charge is stored on the floating gate, the voltages which can be applied to the diffusions of the cell are reduced, and thereby the cell area is correspondingly reduced. |
