| 摘要 |
The method comprise (i) forming a water soluble resist on the wafer, (ii) forming a suitable pattern mask on them by the heat liner and exposing to the light, (iii) developing with a developer contg. water soluble org. solvent, (iv) dyeing with a dye having suitable spectrophoto character, and (v) washing with pure water and rinsing with ketones i.e. acetone, methylethyl ketone.
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