发明名称 |
Method of manufacturing cubic boron nitride p-n junction body. |
摘要 |
<p>In a method of manufacturing a cubic boron nitride p-n junction body, cBN seed crystals (1) of a first conductivity type are made coexist with original BN (3) and a solvent (2) containing a doping material of a second conductivity type, to grow cBN of the second conductivity type from the seed crystals (1). The solvent (2) contains 0.1 to 5 percent by weight of the doping material. The seed crystals (1) are disposed one by one in a plurality of blocks of the solvent (2), which blocks are separated from each other, to be in contact with nothing but the solvent (2). Due to such disposal, no spontaneous nucleation is caused in portions other than the seed crystals (1). A large-grained cBN p-n junction body is obtained as the result.</p> |
申请公布号 |
EP0331169(A1) |
申请公布日期 |
1989.09.06 |
申请号 |
EP19890103663 |
申请日期 |
1989.03.02 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LIMITED |
发明人 |
DEGAWA, JUNJI;TSUJI, KAZUWO |
分类号 |
B01J3/06;C30B29/38;H01L29/20 |
主分类号 |
B01J3/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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