Semiconductor substrate comprising wafer substrate and compound semiconductor layer.

摘要

A semiconductor substrate including a top epitaxial compound layer comprising: a single-crystalline semiconductor wafer substrate (11); a strained layer superlattice (SLS) structure layer (12) having a lattice constant varying from that of the wafer substrate (11) to that of the top compound semiconductor layer (15) and formed on the wafer substrate (11); a semiconductor buffer layer (13) having the same lattice constant as that of the top compound semiconductor layer (15) and formed on the SLS structure layer (12); another SLS structure layer (14) for filtering dislocations having a fixed lattice constant equal to that of the top semiconductor layer (15) and formed on the buffer layer (13); and the top semiconductor layer (15) formed on the another SLS structure layer (14).