EPITAXIAL CRYSTAL GROWTH METHOD,申请号JP19880048835-传众专利搜索

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发明名称	EPITAXIAL CRYSTAL GROWTH METHOD
摘要
申请公布号	JPH01223718(A)	申请公布日期	1989.09.06
申请号	JP19880048835	申请日期	1988.03.02
申请人	MITSUBISHI ELECTRIC CORP	发明人	HAYAFUJI AKIO
分类号	H01L21/302;H01L21/20	主分类号	H01L21/302
代理机构		代理人
主权项
地址

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