| 摘要 |
PURPOSE:To obtain a rewritable phase change type optical memory medium by using a Ge-Bi-Te-Se glass material having the compsn. existing in the compsn. region within 2atom.% from the straight line indicating the material expressed by the general formula (GeTe)x(Bi2Te3-ySey)1-x on a triangular compsn. diagram. CONSTITUTION:This rewritable phase change type optical memory medium contains the Ge-Bi-Te-Se glass material having the compsn. existing in the compsn. region within 2atom.% from the straight line indicating the material expressed by the general formula (GeTe)x(Bi2Te3-ySey)1-x (where x=0.1-0.6, y=0-1.5) on the triangular compsn. diagram when Ge, Bi, Te or Te+Se is taken at the respective vertexes. All of the various conditions regarded to be necessary in practicable use, for example, percentage modulation (>=20%), the number of rewritable times (>=10<6> times), long-term preservable property (>=10 years), and erasing time (<=0.2musec) are thereby sufficiently satisfied. |
