| 摘要 |
<p>PURPOSE:To reduce the film peeling or disconnection of a source wiring in the vicinity of a terminal part by forming a gate insulating layer on the lower layer or a source wiring terminal part. CONSTITUTION:A gate insulating layer 2 based upon silicone nitride, an amorphous silicon layer 3 and a protecting insulation layer 4 based upon silicon nitride are stacked on an insulating substrate 1 on which a gate electrode 9 and a gate wiring 8 are formed. Respective layers are stacked so as to mask only a gate wiring terminal part 7 by means of a metal mask. The protecting insulation layer 4 is etched so that only a TFT part is left, a silicon layer 10 containing n-type impurity is stacked and then a metallic layer 11 is stacked. The metallic layer 11 is patterned so as to form a source electrode and a drain electrode and then masked and the amorphous silicon layer 3 and the n-type silicon layer 10 are removed by etching. Then, a transparent conductive layer 6 is stacked and selectively removed by etching to form a source wiring 12 and a picture element electrode 13. Since a source wiring terminal part 5 is formed on the gate insulating layer 2, the film peeling, disconnection, etc., of the source wiring in the vicinity of the source wiring can be sharply reduced.</p> |
