发明名称 CONTACT ALLOY FOR VACUUM BULB
摘要 PURPOSE:To reduce the generation of a material transfer phenomenon between contacts by making the ratio of the major axis to the minor axis of the formation of Cu crystalline particles of a Cu-Bi alloy 3.0 or larger. CONSTITUTION:An isolation chamber 1 is partitioned airtight by an insulating container 2 formed cylindrical and metallic lids 4 and 5 provided through connections 3 and 3a at both ends of the container 2. In the isolation chamber 1, a fixed electrode 8 and a movable electrode 9 are arranged at the opposing ends of a pair of electrode rods 6 and 7, and the tips of the electrode 8 and 9 form contacts 14 and 14a. The contacts 14 and 14a are composed of a Cu-Bi alloy, and the whole area of the parts where the ratio of the major axis to the minor axis of the Cu crystalline particles is 3.0 or larger occupies 90% or more. To such an alloy, 0.0001-0.1% of boron is added, and the longitudinal direction of the Cu crystalline particles is arranged parallel to the contact surface. By such a constitution, the material transfer amount can be reduced, the contact resistance property can be improved, and the width of unevenness can be reduced.
申请公布号 JPH01217816(A) 申请公布日期 1989.08.31
申请号 JP19880040766 申请日期 1988.02.25
申请人 TOSHIBA CORP 发明人 OKUTOMI ISAO;SEKI KEISEI;HONMA MITSUTAKA
分类号 H01H33/66;H01H1/02 主分类号 H01H33/66
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