| 摘要 |
PURPOSE:To obtain a semiconductor device of high breakdown strength by a method wherein a groove of the semiconductor device of a double positive bevel is formed with a diamond cutting tool by using an NC working machine in order to improve the accuracy of the depth of the groove. CONSTITUTION:A silicon substrate 1 is chucked to a rotating body 8; while it is turned with a shaft 81 as the center, the substrate 1 is worked by using a cutting tool 9 which has been connected to an NC working machine. For example, the rotating body 8 where the substrate 1 has been sucked is turned at about 2000rpm. After an edge 91 of the cutting tool has been advanced at a working feed rate of about 10mum/min in the y direction, a groove is escaped by about 500mum in the x direction. After the edge 91 of the cutting tool has been advanced to a desired depth of the groove, it is shifted to the -x direction by about 50mum; the cutting tool 9 is lifted in the -y direction; a working finish is executed. By this setup, the accuracy of the depth of the groove is improved; a semiconductor device of high breakdown strength can be obtained. |
