SUPERCONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PURPOSE: To reliably deposit a tunnel barrier layer having a thickness equivalent to the coherence length by connecting a bias means in a pair of superconducting areas so as to generate electron current which transverses the grain boundary in a high Tc superconducting layer. CONSTITUTION: A substrate 10 has two single crystalline grain areas which are separated by a grain boundary GB. A high Tc superconducting material layer 12 is epitaxially grown on the substrate 10. The superconducting layer 12 is patterned by using photons or high energy grains 14. A thin strip of the superconducting layer 12 is left on the substrate 10 by such patterning. The two superconducting areas are connected with a bias power source 18 by a contact 16, and a power source which transverses the grain boundary GB in the superconducting layer is provided.