| 摘要 |
PURPOSE:To stably deposit a metal film even in a fine contact hole by forming exposed region of a silicon layer on a dummy region of a silicon wafer, and simultaneously depositing a metal film by a elective CVD method on the region and in the hole. CONSTITUTION:After the whole surface of a MOS transistor formed with a gate is covered with a smooth coating layer 11, contact holes 12a, 12b which extend to the source, drain regions 9, 10 of the transistor are made. An oxide film 6 on the dicing line 16 of the wafer is removed by etching, and a dummy region exposed on the silicon layer is formed. A tungsten layer 13 is selectively caused to grow in the holes 12a, 12b and on the line 16 by a selective CVD method, tungsten layers are continuously stably deposited in the holes 12a, 12b, and a wiring layer 14 made of aluminum or the like is formed on the smoothed surface made by the tungsten layers. |
