Semiconductor storage device and method for its fabrication

摘要

A dynamic random-access memory or DRAM comprises a MOS transistor formed in a semiconductor substrate and a capacitor formed thereon. The MOS transistor comprises source and drain layers (7) constructed in the semiconductor substrate, a trench (9) formed in the section of the semiconductor substrate which lies between the source and drain layers, a gate insulation film (9a) formed on the inner surface of the trench, and a gate electrode (10) generated on the former. Furthermore, the capacitor comprises a first capacitor electrode (13) which is connected to one of the source and drain layers and is formed on the semiconductor substrate, an insulating film (14) formed on the surface of the first capacitor, and a second capacitor electrode (15) generated on the insulating film. <IMAGE>