| 摘要 |
<p>PURPOSE: To improve load resistance alternating characteristic by permitting a press contact board and a wafer to exhibit a flatness error of a prescribed value or less on a contact flat plane and permitting the press contact boards to exhibit an axis error of a prescribed value or less alternately. CONSTITUTION: A wafer has two areas, the first area at the left has a layer row and a GTO structure and the second area at the right has a layer row and a diode structure. On the cathode side in the diode area, an inner p type zone 13 is directly connected to a metal diode anode layer 10, and the anode layer 10 is positioned at the same level as a cathode layer 6 and is brought into contact with the cathode layer by a cathode side press contact board 1. On the anode side, an anode layer 4 is continuously formed over the two areas. The flatness of a press plane (an error of±5μm or less) and the centering of press contacts 1 and 3 (an axis error of 500μm or less) are essential conditions.</p> |
