HEAT TREATING METHOD FOR SEMICONDUCTOR SUBSTRATE AND HEAT TREATING APPARATUS USED FOR THIS METHOD,申请号JP19880040641-传众专利搜索

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发明名称	HEAT TREATING METHOD FOR SEMICONDUCTOR SUBSTRATE AND HEAT TREATING APPARATUS USED FOR THIS METHOD
摘要
申请公布号	JPH01216522(A)	申请公布日期	1989.08.30
申请号	JP19880040641	申请日期	1988.02.25
申请人	TOSHIBA CORP;TOSHIBA MACH CO LTD;TOSHIBA ELECTRON DEVICE ENG CORP	发明人	TOISHI TOSHIHIKO;MURANAKA TSUNEO;MATSUO TAKESHI;MATSUI ISAO;KAWACHI YASUNOBU;GOTO YOICHI;TAKE KUNIAKI
分类号	H01L21/22;H01L21/205;H01L21/31	主分类号	H01L21/22
代理机构		代理人
主权项
地址

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