| 摘要 |
PURPOSE:To shorten a beam radiating time, to shorten a working time, to reduce a damage on a primer, and to accurately form in shape an x-ray absorber pattern by correcting a mask layer pattern presented on an X-ray absorber layer. CONSTITUTION:An SiN film is formed as an X-ray transmission film 3 on one side face of an Si wafer for forming a mask supporting frame 5, an X-ray absorber layer 2 is formed on the face of the film, and formed on the layer 2 with an SiO2 film as a mask layer. Further, a resist layer pattern is formed on the mask layer, the mask layer is removed by dry etching with the resist layer pattern as a mask, thereby forming a mask layer pattern 1 for forming a circuit pattern. Then, a focused ion beam 6 is radiated to an SiO2 layer pattern 12 of a black defect to be removed by sputtering, thereby obtaining a corrected mask layer pattern 11. Thereafter, with the pattern layer as a mask a tantalum layer of a primer is removed by reactive ion etching, thereby obtaining an X-ray absorber pattern 21 having no pattern defect. |
