发明名称 METHOD AND DEVICE FOR EVALUATING COMPOSITION DISTRIBUTION OF SEMICONDUCTOR MIXED CRYSTAL
摘要 PURPOSE:To easily evaluate the composition ratio of semiconductor mixed crystal with high accuracy by finding an intensity distribution by a least squaring method from (n) spectral intensity data nearby the peak of a spectrum and determining the wavelength (or diffraction angle) of the largest intensity. CONSTITUTION:An electron gun 1 projects an electron beam on a sample 2 on a stage. A spectroscope control means 5 which converges luminescence emitted by the sample 2 through the a converging mirror and guides it to a spectroscope 4 controls the spectroscope 4 so that light of wavelengths nearby the wavelength lambda0 which the luminescence has maximum intensity is inputted to a detector 6 in order. A personal computer 8 calculates the intensity distribution of the luminescence by a least squaring method from the data and determines the wavelength lambda0 of the maximum light emission intensity. The mixed crystal ratio is found from the relation between the wavelength lambda0 and mixed crystal ratio. A stage control means 9 moves the stage to find the mixed crystal ratio at respective points of the sample 2, thereby evaluating the composition distribution. The mixed crystal ratio is found even by measuring the angle of X-ray diffraction. The peak wavelength (or diffraction angle) of the spectrum is determined by measuring plural data, which is easy.
申请公布号 JPH01216244(A) 申请公布日期 1989.08.30
申请号 JP19880040708 申请日期 1988.02.25
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 IKEDA KOSUKE;ISHII YOSHIICHI
分类号 G01N23/207;G01N23/225;H01L21/66 主分类号 G01N23/207
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