Method for profiling wafers and for locating dies thereon.

摘要

A new and improved method and apparatus for profiling wafers (100), and for uniquely identifying the dies formed thereon, wherein the method includes the step of locating a set of reference points (110, 111) along the periphery of the wafer, relative to a predetermined coordinate system. Next, the equation of a hypothetical circle which substantially contours the periphery of the wafer, and which passes through the reference points, is defined. The coordinates (a,b) of the center (120) of the hypothetical circle, as well as the coordinates of an arbitrary reference die (102) on the wafer, are then derived from the equation of the hypothetical circle. Subsequently, the entire surface of the wafer is mapped relative to the center or to the reference die, by utilizing predetermined stepping dimensions.