| 摘要 |
1,270,550. Semi-conductor device manufacture. WESTERN ELECTRIC CO. Inc. 22 Dec., 1969 [27 Dec., 1968], No. 62287/69. Heading H1K. [Also in Divisions C1 and C7] An epitaxial film of Group III(a) and V(a) elements (Mendelyeev Table given in the Handbook of Chemistry and Physics) is deposited on a substrate of e.g. Si, Ge, gallium arsenide, phosphide or arsenic phosphide, indium arsenide or phosphide or sapphire. Examples of the film are (1) gallium arsenide, (2) gallium phosphide, (3) Ga.As 0 . 25 P 0 . 75 , (4) gallium arsenide with Zn, 'and (5) Gallium arsenide with Te. |
