Method for predicting density of micro crystal defects in semiconductor element from silicon wafer used in the manufacture of the element, and infrared absorption measurement apparatus for this method

摘要

In a method for predicting a density of micro crystal defects to be generated in a semiconductor element, an infrared absorption spectrum associated with a silicon wafer, which is used for the manufacture of the semiconductor element, is formed by a spectrum forming system. The spectrum has a first oxygen absorption peak at the wavenumber range of 1150 to 1050 cm-1 and a second oxygen absorption peak at 530 to 500 cm-1. First and second coefficients indicating oxygen concentrations at the first and second peaks are read by a reading unit. The density of the micro crystal defects are predicted by using a ratio of the first and second coefficients as a monitor.