| 摘要 |
A double heterostructure light emitting diode comprises a p-active layer, and n and p-cladding layers respectively provided on the both sides of the p-active layer. The p-active layer is doped with p-impurity such that the concentration thereof is distributed therein to be higher in a region proximate to the p-n junction between said p-active and n-cladding layers. As a result, a response time is shortened and light output is increased.
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