| 摘要 |
PURPOSE:To obtain a negative characteristic semiconductive material which has increased resistivity stability at elevated temperature and reduced change with the passage of time, by adding compounds of Cu, Al, Si, Li or Zr and Fe to ZnO as a major component and calcining them. CONSTITUTION:ZnO, as a major component, is combined with at least one element selected from Cu, Al, Si, Sb, Li or Zr and 0.04-1.2mol.% of Fe compound, as Fe atom. based on ZnO and they are calcined to give the subject semiconductive material. The forms of Cu, Al, Si, Sb, Li, Zr are their compounds and preferably selected from CuO, Al2O3, SiO2, Sb2O3, Li2CO3, ZrO2 and Fe compound is preferably selected from Fe2O3, FeO, Fe(NO3)2. In this semiconductive material, the Fe compound acts to reduce the electric resistance at elevated temperature so that the resistance increased by addition of Cu, Al, Si, Sb, Li, Zn is compensated or reduced. |
