POLYACRYLIC ACID DERIVATIVE

摘要

PURPOSE:To obtain a positive type resist material improved in dry etching resistance and having high sensitivity and high resolving power, by using a polyacrylic acid derivative represented by a specific structural formula containing halogen and benzene rings. CONSTITUTION:A positive type resist improved in dry etching resistance and having high sensitivity and high resolving power is produced by using a halogenated polyacrylic acid ester derivative of the given formula (wherein R1 and R2 are each H or F-substituted methyl, and are not H at the same time; Y1-Y5 are each H or F; Rf is F-substituted alkyl; m and n are each a positive integer with the n/m being 1 or below) that is a copolymer of an acrylic ester having a Cl atom. in the alpha-position and an F atom. and a benzene ring in the ester part with a methacrylic ester of which ester part is F- substituted alkyl.