| 摘要 |
<p>PURPOSE:To reduce the variance of dimensions due to ghost or flare by forming a multilayered film whose reflectance is minimum for the wavelength of excimer laser light. CONSTITUTION:A light shielding film 3 consisting of a chromium film and a low reflection film 4 consisting of a chromium oxide film are formed on a translucent substrate 2 consisting of quartz by the sputtering method or the CVD method. The film thickness of the film 4 is selected in accordance with the classification of excimer laser light used for exposure. An electron beam resist pattern is formed on the film 4 and selectively etched to form a light shielding pattern 5 consisting of films 3 and 4. Thus, a mask where the reflectance of the surface of the pattern 5 is minimum for the wavelength of excimer laser light is obtained. The pattern may consist of three layers, namely, a low reflection film, a light shielding film, and another low reflection layer.</p> |
