| 摘要 |
PURPOSE:To provide an uniform specific resistance value of a semiconductor single crystal grown by pulling up, by specifying the length of a communication tube for supplying a raw material melt from an outer chamber of an integral type double crucible to an inner chamber. CONSTITUTION:The length of a communication pipe 16 passing through a partition wall 14 in an integral type double crucible (outer crucible) 11 is set at b>L>=4a on the assumption that the inside diameter of the pipe 16 is (a) and the inner periphery of an inner chamber is (b). Thereby, a semiconductor single crystal 17 is pulled up from an inner melt 20. If the above-mentioned conditions L>=4a are satisfied, suppressing effects on outflow of impurities are remarkable regardless of the inside diameter (a) of the pipe 16 without depending on rotation of the crucible 11, etc. If b is b>L, melt is readily moved. In case an Si single crystal is pulled up, the melt 20 can be readily moved if the inside diameter (a) of the pipe 16 is a>2mm. If (a) is 30mm>a, no impurity is discharged. Furthermore, abnormal crystal deposition from the surface of the wall 14 can be prevented to pull up the aimed semiconductor single crystal by increasing the temperature of the inner melt 21 in the outer chamber at least >=15 deg.C from that of the melt in the inner chamber near the inside of the wall 14. |
