发明名称 |
Semiconductor integrated circuit device |
摘要 |
The inventive semiconductor integrated circuit device comprises a plurality of regularly disposed elementary units, each including a P channel MOS FET element paired with and an N channel MOS FET element. Desired ones of the elementary units each comprise a MOS field effect transistor having an ordinary form of a source-drain region formed by a diffusion region, while the remaining elementary units each have a diffusion region selectively connected to serve as a resistive element. Consequently, a desired circuit can be implemented without a resistive element being formed on each elementary unit.
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申请公布号 |
US4862241(A) |
申请公布日期 |
1989.08.29 |
申请号 |
US19850807831 |
申请日期 |
1985.12.11 |
申请人 |
SANYO ELECTRIC CO. LTD. |
发明人 |
ASHIDA, YASUHIRO;YOKOTA, SHIGEKI |
分类号 |
H01L27/04;H01L21/82;H01L21/822;H01L21/8234;H01L21/8238;H01L27/088;H01L27/092;H01L27/118;H01L29/78 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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