| 摘要 |
<p>PURPOSE:To obtain a light emitting device which does not create a sub-peak wavelength and is formed on a GaAs substrate by a method wherein crystal layers including an active layer are formed on the GaAs substrate whose p-type impurity concentration is within a specific range and p-type side and n-type side electrodes are provided. CONSTITUTION:Crystal layers 1-4 including an active layer 3 are formed on a GaAs substrate B whose p-type impurity concentration is 1X10<16>-1X10<18>cm<-3> and p-type side and n-type side electrodes E2 and E1 are provided. For instance, the p-type AlGaAs layer 1, the p-type AlGaAs barrier layer 2, the p-type (or n-type) AlGaAs active layer 3 and the n-type AlGaAs barrier layer 4 are successively built up on the p-type GaAs substrate B doped with Zn so as to have an impurity concentration of 1X10<17>-7X10<17>cm<-3>. Then the n-type side electrode E1 made of Au-Ge and the p-type side electrode made of Au-Zn are provided on the barrier layer 4 and on the GaAs substrate B respectively to complete a light emitting device.</p> |
