| 摘要 |
PURPOSE:To reduce occurrences of latchup phenomena and soft errors caused by incidence of alpha rays, by forming CZ crystals having resistivity which is higher than that of conductive polycrystal silicon and having a specified oxygen concentration on the conductive polycrystal silicon having specified resistivity. CONSTITUTION:A CZ crystal 10a having resistivity which is higher than that of a conductive polycrystal silicon 1 and having an oxygen concentration of 25ppm or less is formed on the conductive polycrystal silicon 11 having specified resistivity of 0.01OMEGA.cm or less. A circuit substrate is thus made at a low cost. This approach suppress occurrences of latchup phenomena in a CMOS structure as well as of soft errors due to the incidence of alpha rays in a DRAM. |
