| 摘要 |
PURPOSE:To enable single mode oscillation to be made and to obtain an improved element characteristics to be obtained by adding a rare-earth element to the clad layer, optic guide layer, and one of side embedding layers. CONSTITUTION:An n-type InP clad layer 12 which is also used for buffer layer is formed on an n-type InP substrate 11 and a mesa stripe wherein a GaInAsP active layer 15, a GaInAsP optic guide layer 14, and a p-type InP clad layer 15 are laminated is formed on it. A high-resistance InP embedding layer 16 is embedded at both sides of mesa and a P-type GaInAsP contact layer 17 is formed on the uppermost layers 15 and 16. An n-side electrode 18 and a P-type electrode 19 are provided on the lower surface of a substrate 11 and on a layer 17, respectively. Then, a rare earth element Er is added to a guide layer 14. |
