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发明名称
ANNEALING OF SEMICONDUCTOR SUBSTRATE
摘要
申请公布号
JPH01214018(A)
申请公布日期
1989.08.28
申请号
JP19880039859
申请日期
1988.02.22
申请人
NEC CORP
发明人
FUJII MASAHIRO
分类号
H01L21/26;H01L21/265;H01L21/324
主分类号
H01L21/26
代理机构
代理人
主权项
地址
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