| 摘要 |
PURPOSE:To facilitate integration of laser elements which oscillate wave whose wavelengths are different from each other without a built-in diffraction lattice by a method wherein active layers are formed on a lower cladding layer while excimer laser beams whose intensities are different from each other in stripes are applied. CONSTITUTION:A buffer layer 102 is formed on a semiconductor substrate 101 and a lower cladding layer 103 is formed on it. Active layers 104, 114, 124 and 134 are formed on the lower cladding layer 103 while excimer laser beams whose intensities are different from each other in stripes are applied. After that, an upper cladding layer 106 is formed on the active layers and a contact layer 107 is formed on it. For instance, the n-type buffer layer 102 and the n-type Al0.5Ga0.5As lower cladding layer 103 are formed on the n-type GaAs substrate 101. Then a filter mask 105 whose transmission intensity is varied periodically in stripes is employed and, while excimer laser beams are applied, the Al0.01Ga0.99As active layer 104, the Al0.05Ga0.95As active layer 114, the Al0.1Ga0.9As active layer 124 and the Al0.15Ga0.85As active layer 134 are formed simultaneously by MOCVD. |
