发明名称 RANDOM ACCESS MEMORY
摘要 PURPOSE:To change the direction of data and read by supplying an address value consisting of the high order bit (M-L) bit of a first address value and the low order bit of a second address value at the time of reading and designating the data of a second direction orthogonal with a first direction. CONSTITUTION:At the time of reading to a column direction, a write enable signal WE goes to a high level and a data direction designating signal H/V goes to a low level, the externally inputted address values A0-A10 are shifted by three bits, the address values A3-A10 are supplied to respective memory cell arrays 11-18 as the first address values MA0-MA7, chip select signals R/CS1-R/CS8 are completely brought into the low level, the respective memory cell arrays 11-18 are all selected, the one bit of the output data of the respective memory cell arrays 11-18 selected by the selectors 31-38 of a data direction converting part 30 is collected to have 8 bits by a three state gate 39 based on the address values A0-A2 and read.
申请公布号 JPH01212966(A) 申请公布日期 1989.08.25
申请号 JP19880037381 申请日期 1988.02.22
申请人 OKI ELECTRIC IND CO LTD 发明人 UMEMURA MASAO;ARIYASU MASAHIKO
分类号 G06F12/00;G06F12/04;G06T1/60;G06T3/60;H04N1/04;H04N1/21 主分类号 G06F12/00
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