MANUFACTURE OF MIS TYPE SEMICONDUCTOR DEVICE USING GALLIUM ARSENIDE,申请号JP19880036971-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	MANUFACTURE OF MIS TYPE SEMICONDUCTOR DEVICE USING GALLIUM ARSENIDE
摘要
申请公布号	JPH01211976(A)	申请公布日期	1989.08.25
申请号	JP19880036971	申请日期	1988.02.18
申请人	NEC CORP	发明人	FUJIEDA SHINJI
分类号	H01L29/78;H01L21/314;H01L21/318	主分类号	H01L29/78
代理机构		代理人
主权项
地址

您可能感兴趣的专利

Double seat valve and sealing of a double seat valve

Aero-acoustic optimisation method for complex-section mechanical parts and corresponding mechanical part and landing gear

Systems and methods for long endurance stratospheric operations

Systems, methods, and apparatus for overhead scanning of images in a manual distribution environment

Transformation system for nutritional substances

Automatic configuration of a terminal

In-situ accuracy control in flux dipping

Surgical apparatus including surgical buttress

Cover for welding wire container

System for the identification of different fastening elements

Coin handling apparatus, coin handling method and coin handling system

Torque limiting coupling

Ground conveyor

System and method for controlling hydraulic system based on temperature

Supercharger-equipped internal combustion engine for saddle-ride type vehicle

Control systems and methods for electric drive utility vehicles

Method and apparatus for utilizing carbon dioxide in situ

Dissolvable barrier for downhole use and method thereof