发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To prevent a disconnection due to immersion of any external water content from occurring by a method wherein a metallic electrode for inputting external signal is formed of multilayer electrode film series-connecting the capacitances. CONSTITUTION:A metallic electrode for inputting external signal is composed of a three layered conductor layer while the topmost conductor layer 30 as an electrode for connecting signal input, the intermediate layer 40 for connecting conductor to inner circuit and the lowermost layer 50 comprising resistance material such as polycrystalline silicon are respectively used as connecting conductors to a substrate 10 (GND). Static capacitances C1, C2 using silicon oxide films 60 as dielectric are respectively formed between the topmost layer 30 and the intermediate layer 90 as well as between the intermediate layer 40 and the lowermost layer 50 while a resistor R using the lowermost layer resistance conductor film 50 is inserted between a circuit knot (a) and the substrate (GND). In other words, the capacitances C1, C2 are structured to be connected in series not to be directly connected by a conductor from the metallic electrode 30 on a chip to an inner circuit (b). Through these procedures, a disconnection due to immersion of any external water content can be prevented from occurring.
申请公布号 JPH01211933(A) 申请公布日期 1989.08.25
申请号 JP19880036614 申请日期 1988.02.19
申请人 NEC IC MICROCOMPUT SYST LTD 发明人 HONDA HIDETOSHI
分类号 H01L21/60;H01L21/3205;H01L23/52 主分类号 H01L21/60
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