| 摘要 |
PURPOSE:To obtain the title ceramic superconducting material having excellent uniformity and reproducibility and capable of providing highly reliable IC, etc., in good yield by using the halides of a rare-earth metal, an alkaline-earth metal, and copper as the starting materials, and forming the thin film on a substrate by the chemical vapor growth method. CONSTITUTION:The growth substrate 6 is placed on the substrate holder 5 provided in a reaction tube 1, and BaCl2, YCl3, and CuCl are placed in respective source boats 4a-4c. The reaction tube 1 is then heated by resistance heating furnaces 2a-2d to generate gaseous BaCl2, gaseous YCl3, and gaseous CuCl. The generated gases are transferred onto the substrate 6 by the carrier gas introduced from a gas inlet 3a. CO2, H2, and the carrier gas are simultaneously introduced from a gas inlet 1a, and sent onto the substrate 6. A chemical reaction shown by the equation is caused on the substrate 6, and the thin film of a high-temp. superconductor is grown on the substrate 6.
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