| 摘要 |
PURPOSE:To prevent the lowering of the bond strength of wirings connecting input/output pads and the outside and the generation of cracks by forming the input/output pads of layers except an uppermost layer of wiring. CONSTITUTION:First layer wirings 13 are shaped onto a semiconductor substrate 21, an inter-layer insulating film is grown, an opening for connecting the first layer wiring 13 and a second layer wiring 14 is bored, and the second layer wiring 14 is formed onto the opening. Input/output pads 12 for a power supply and signals are shaped at the same time, an inter-layer insulating film is grown onto the pads 12 again, an opening for connecting the second layer wiring 14 and a third layer wiring 15 is bored, and the third layer wiring 15 in thickness required for making large currents flow is formed. A protective film is applied onto the third layer wiring 15, and lastly the protective film and the inter layer insulating film on the input/output pads 12 for the power supply and the signals are etched. Accordingly, the lowering of the bond strength of the wirings, bonding wires, connecting the input/output pads and the outside and the input/output pads and the generation of cracks can be prevented. |
