| 摘要 |
PURPOSE:To lower consumed currents at the time of standby without increasing the area of a memory cell by forming one part of a low-resistance polycrystalline silicon layer in a resistance element after a high resistance polycrystalline silicon layer is formed. CONSTITUTION:Low-resistance N-type polycrystalline silicon layers 102 and 105 are formed onto the surface of a semiconductor substrate 100 through an silicon oxide film 101, and a high-resistance polycrystalline silicon layer 104 is shaped while a section where first layers 102 and 105 are not superposed to the layer 104 is removed, and lastly the N-type polycrystalline silicon layers 102 and 105 are formed. According to a resistance element 113 constituted in this manner, the high-resistance polycrystalline silicon layer in a resistance section and the low-resistance polycrystalline silicon layers as electrodes for the resistance section are shaped by separate layers, thus approximately deter mining the length L1 of the resistance element 113 by a space between the low-resistance polycrystalline silicon layers 102 and 105. Accordingly, consumed currents at the time of standby can be reduced without increasing the area of a memory cell. |
