| 摘要 |
PURPOSE:To reduce DC resistance component, and increase open voltage, by arranging a stable transparent thin film in a reducing atmosphere between a transparent electrode and a non-single crystal semiconductor layer, and forming an electric ohmic contact between them through a plurality of holes or trenches. CONSTITUTION:In order to prevent the reduction of a transparent electrode 2, a thin film 3 which is stable and transparent even in an reducing atmosphere is formed on the transparent electrode 2. A plurality of holes 4 are arranged in the thin film 3, and electric ohmic contact between the transparent electrode 2 and a non-single crystal Si film 5 formed thereon is formed through the above holes. Thereby a low resistance ohmic connection can be formed, and open voltage can be increased. Further a most part is protected by a transparent thin film 3, so that change of properties of the transparent electrode 2 can be prevented. |
