| 摘要 |
PURPOSE:To improve emitter injection efficiency and base-collector breakdown strength characteristics by depositing a dielectric film onto a semiconductor, selectively removing the film and forming a low carrier concentration region in a self-alignment manner through hydrogenation by hydrogen or deuterium plasma. CONSTITUTION:Dielectric films 2, 3 deposited onto a semiconductor 1 are gotten rid of selectively, and a low carrier concentration region 11 is shaped in a self-alignment manner through hydrogenation by hydrogen or deuterium plasma. Accordingly, difference is formed between emitter, concentration and collector concentration, and emitter concentration is heightened and collector concentration is lowercd, thus improving emitter injection efficiency, then enhancing the breakdown characteristics of a base-collector p-n junction. |
